Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-08
2005-03-08
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S262000, C257S368000, C438S135000, C438S151000, C438S201000, C438S207000, C438S216000
Reexamination Certificate
active
06864133
ABSTRACT:
A device comprising a semiconductor film (12) formed on a substrate (11), a gate region (15), in which a gate insulating film (13) formed on the semiconductor film and a gate electrode film (14) are laminated, isolation means (A) formed on both sides of the gate region to prevent contact between the gate electrode film and other regions, and a source region and a drain region formed by baking a liquid semiconductor material (17) and disposed on regions on the substrate and on both sides of the gate region.
REFERENCES:
patent: 4838991 (1989-06-01), Cote et al.
patent: 6248637 (2001-06-01), Yu
patent: 6479838 (2002-11-01), Morosawa
patent: 6541354 (2003-04-01), Shimoda et al.
Aoki Takashi
Furusawa Masahiro
Yudasaka Ichio
Harness & Dickey & Pierce P.L.C.
Louie Wai-Sing
Pham Long
Seiko Epson Corporation
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