Device isolation technology on semiconductor substrate

Details Device isolation technology on semiconductor substrate Device isolation technology on semiconductor substrate

2008-05-30

2009-11-24

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S424000, C438S425000, C438S426000, C438S427000, C438S428000, C438S435000, C438S487000, C438S589000, C438S787000, C438S788000, C257SE21545, C257SE21546, C257SE21548, C257SE21549, C257SE21550

Reexamination Certificate

active

07622369

ABSTRACT:
A method of forming device isolation regions on a trench-formed silicon substrate and removing residual carbon therefrom includes providing a flowable, insulative material constituted by silicon, carbon, nitrogen, hydrogen, oxygen or any combination of two or more thereof; forming a thin insulative layer, by using the flowable, insulative material, in a trench located on a semiconductor substrate wherein the flowable, insulative material forms a conformal coating in a silicon and nitrogen rich condition whereas in a carbon rich condition, the flowable, insulative material vertically grows from the bottom of the trenches; and removing the residual carbon deposits from the flowable, insulative material by multi-step curing, such as O2 thermal annealing, ozone UV curing followed by N2 thermal annealing.

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