Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-07-26
2009-12-08
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S524000, C257SE21546
Reexamination Certificate
active
07629238
ABSTRACT:
Disclosed are an isolation structure and a method for forming the same. The present isolation structure includes a substrate having a first semiconductor layer having a first lattice parameter, a second semiconductor layer having a second lattice parameter larger than the first lattice parameter, and a strained semiconductor layer; a well in the substrate; a plurality of isolation layers in the strained semiconductor layer and the second semiconductor layer, defining an active region; and a plurality of punch stop layers under the isolation layers.
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Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Mahan Theresa J.
Monbleau Davienne
The Law Offices of Andrew D. Fortney
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