Device isolation methods for a semiconductor device

Details Device isolation methods for a semiconductor device Device isolation methods for a semiconductor device

1995-12-05

1998-09-15

Fourson, Geroge R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Implanting to form insulator

438425, H01L 2176

Patent

active

058077847

ABSTRACT:
A method of forming a device isolation layer in a semiconductor device comprising the steps of implanting oxygen ions in a field region of a major surface of semiconductor substrate, and oxidizing the oxygen implanted region to form a field oxide layer having an upper portion of first thickness formed above the major surface of the semiconductor substrate, and a lower portion of second thickness formed in the semiconductor substrate, wherein the ratio of first thickness to second thickness is not less than 1 to 2.

REFERENCES:
patent: 5393693 (1995-02-01), Ko et al.
patent: 5445989 (1995-08-01), Lur et al.
patent: 5498566 (1996-03-01), Lee
IBM Tech. Disc. Bull., vol. 27, No. 11, Apr. 1985, pp. 6703-6704.

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