Device isolation method of semiconductor memory device and...

Details Device isolation method of semiconductor memory device and... Device isolation method of semiconductor memory device and...

2006-10-17

2006-10-17

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000

Reexamination Certificate

active

07122428

ABSTRACT:
The present invention provides a device isolation method of a semiconductor memory device and flash memory device fabricating method using the same, which can prevent a bridge occurrence between cells. The present invention includes forming a nitride layer pattern defining a trench forming area on a semiconductor substrate, forming a spacer on a sidewall of the nitride layer pattern, forming a trench in the semiconductor layer by removing a portion of the semiconductor layer using the nitride layer pattern and the spacer as an etch mask, forming a device isolation layer filling up the trench, removing the nitride layer pattern and the spacer to complete the device isolation layer, forming a conductor layer over the substrate including the device isolation layer, planarizing the conductor layer and the device isolation layer to lie in a same plane, and forming an insulating layer over the substrate.

REFERENCES:
patent: 6033968 (2000-03-01), Sung
patent: 6323092 (2001-11-01), Lee

Affiliated with

Also associated with

Rating

Device isolation method of semiconductor memory device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Device isolation method of semiconductor memory device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device isolation method of semiconductor memory device and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3697594