Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-06-01
2009-06-16
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
Reexamination Certificate
active
07548474
ABSTRACT:
A method for reading out a memory cell, and a device to be used for reading out a memory cell. In one embodiment, the device includes a first circuit and a second circuit for regulating a voltage present at a line that is adapted to be connected with the memory cell to a predetermined value, wherein said first circuit includes a switching element, and wherein said first circuit is configured such that said switching element is switched on during a first regulating phase and is switched off during a second regulating phase.
REFERENCES:
patent: 4852064 (1989-07-01), Kim et al.
patent: 6233186 (2001-05-01), Tonda
patent: 6724672 (2004-04-01), Nirschl
patent: 6944077 (2005-09-01), Morikawa
Paparisto Edvin
Rogl Stephan
Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Nguyen Van-Thu
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