Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-12-30
1998-12-01
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257370, 257378, H01L 2362
Patent
active
058442804
ABSTRACT:
A protection device for protecting a semiconductor circuit from positive and negative overvoltage such as static electrical discharges. A p-type substrate is provided having a pair of spaced apart n-type regions formed therein. Each of the spaced apart n-type regions has a p.sup.+ region and an n.sup.+ region formed therein. Each of the spaced apart n-type regions also includes an n.sup.+ drain tap which has a portion in contact with the substrate. The n.sup.+ region and one p.sup.+ region of one of the spaced apart n-type regions are connected to a terminal of a semiconductor circuit. The n.sup.+ region and p.sup.+ regions of the other n-type region are connected to a power voltage of the semiconductor device. A insulated gate is formed on a p-type semiconductor substrate, and is in contact with both n+ drain taps. The gate is grounded. The bilateral protection device of the present invention protects the semiconductor circuit against positive and negative overvoltages.
REFERENCES:
patent: 5525826 (1996-06-01), Palara
patent: 5629545 (1997-05-01), Leach
Hardy David B.
Samsung Electronics Co,. Ltd.
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