Coating apparatus – Gas or vapor deposition – With treating means
Patent
1995-10-16
1999-03-09
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
117951, 219634, 432205, 432241, C23C 1600, C03B 2500, H05B 610, F27B 504
Patent
active
058794620
ABSTRACT:
The present invention is directed to a device for heat treatment of objects. It comprises a susceptor for receiving an object in the form of a substrate and a gas mixture fed to the substrate for epitaxial growth of a crystal on said substrate by Chemical Vapor Deposition. The susceptor includes an inner wall and an outer, circumferential wall enclosing the inner wall at a distance therefrom. The inner wall defines a chamber for receiving the object. An enclosed space is formed between the inner and outer wall, and is filled with a powder. The powder is made of SiC, a group III nitride or alloys thereof. Also, for heating the susceptor and thereby also the object, a Rf-field radiator is provided surrounding the susceptor.
REFERENCES:
patent: 2743306 (1956-04-01), Mark
patent: 2901381 (1959-08-01), Teal
patent: 3125416 (1964-03-01), Ryshkewitch et al.
patent: 3343920 (1967-09-01), Lowe
patent: 4263872 (1981-04-01), Ban
patent: 4321446 (1982-03-01), Ogawa
patent: 5433167 (1995-07-01), Furukawa et al.
patent: 5441011 (1995-08-01), Takahashi
Kordina et al., A Novel Hot-Wall CVD Reactor For SiC Epitaxy, Inst. Phys. Conf. Ser. No. 137, Chapter I, Paper presented at the 5th SiC and Related Materials Conference, Washington, DC 1993 pp. 41-44.
Hermansson Willy
Kordina Olle
Tuominen Marko
ABB Research Ltd.
Bueker Richard
Lund Jeffrie R.
Okmetic Ltd.
LandOfFree
Device for heat treatment of objects and a method for producing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Device for heat treatment of objects and a method for producing , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device for heat treatment of objects and a method for producing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1316640