Device fabrication entailing submicron imaging

Details Device fabrication entailing submicron imaging Device fabrication entailing submicron imaging

1992-03-16

1994-12-27

Kight, III, John

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430 4, 430 5, 430311, 430396, 430494, G03F 900

Patent

active

053765052

ABSTRACT:
Fabrication of 0.25 gm design rule or smaller devices on chips, that may attain levels of 256 megabit or higher depends upon lithographic patterning by use of accelerated charged particle beams. Fabrication is expedited by acceleration values resulting in deBroglie wavelengths at least in order of magnitude smaller than such design rule to permit cost saving both in fabricating apparatus and resulting devices. Most importantly, such wavelength values permit significant variation in spatial angle of incidence of beam to wafer to permit both large instantaneous exposure areas and in temporal angle of incidence to expedite beam scanning as emitted from a fixed particle source.

REFERENCES:
patent: 5079112 (1992-01-01), Berger et al.
CA 104 (2):13081t to Iwamatsu, Jan. 13, 1986, "Patterning by electron-beam lithography and-ion beam etching."
M. Lepselter et al, VLSI Electronics Microstructure Science, ed. Norman G. Einspruch, Academic Press, pp. 108-114, 1981.
M. B. Heritage, J. Vac. Sci. Technol., vol. 12, No. 6, Nov./Dec. 1975.
Takayuki Asai, Japanese Journal of Applied Physics, vol. 19 (1980), Supp. 19-1, pp. 47-50, "1:4 Demagnifying Electron Projection System".
H. W. Koops and J. Grob, "X-ray Microscopy", Springer Series in Optical Sciences, vol. 43, G. Schmahl and D. Rudolph, eds. (1984).
M. D. Levinson et al, "Improving Resolution in Photolithography with a Phase-Shifting Mask", IEEE Transaction on Electron Devices, vol. ED-29, No. 12, (Dec. 1982).

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