Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-10-20
2000-07-18
Elms, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438303, 438586, 438655, H01L 21336, H01L 213205
Patent
active
060906731
ABSTRACT:
The present invention overcomes the difficulties found in the background art by providing a direct low resistive contact between devices on a semiconductor chip without excessive current leakage. Current leakage is prevented in the preferred design by using silicon on insulator (SOI) construction for the chip. By constructing the direct contact over an insulator, such as silicon dioxide, current leakage is minimized. The preferred embodiment uses silicide to connect a polysilicon gate to a doped region of the substrate. An alternative embodiment of the present invention provides for the use of conductive studs to electrically connect devices. An increased density of approximately twenty percent may be realized using the present invention.
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"Fabricating one Semiconductor contact stud borderless to another" IBM Technical Disclosure Bulletin vol. 34 No. 4B Sep. 1991.
Allen Archibald J.
Furukawa Toshiharu
Hakey Mark C.
Horak David V.
O'Neil Edward F.
Elms Richard
International Business Machines - Corporation
Lebentritt Michael S.
Shkurko Eugene I.
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