Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-29
2008-07-29
Le, Thao X. (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S290000, C438S276000, C438S788000, C977S938000
Reexamination Certificate
active
11138797
ABSTRACT:
A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.
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Afzali-Ardakani Ali
Kagan Cherie R.
Murray Christopher B.
Sandstrom Robert L.
Talapin Dmitri V.
Connolly Bove & Lodge & Hutz LLP
International Business Machines - Corporation
Le Thao X.
Tran Thanh Y
Tuchman Ido
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