Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-29
2008-07-29
Le, Thao X. (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S290000, C438S276000, C438S788000, C977S938000
Reexamination Certificate
active
07405129
ABSTRACT:
A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.
REFERENCES:
patent: 6128243 (2000-10-01), Chan et al.
patent: 6891227 (2005-05-01), Appenzeller et al.
patent: 2002/0130311 (2002-09-01), Lieber et al.
patent: 2006/0284218 (2006-12-01), Kaner et al.
Murray et al.,Synthesis and Characterization of Monodisperse Nanocrystals and Close-Packed Nanocrystal Assemblies; Annu. Rev. Mater. Sci. 2000, 30 : 545-610.
Shim et al., Polymer Functionalization for Air-Stable n-Type Carbon Nanotube Filed-Effect Transistors J. Am. Chem. Soc. 123, 11512 (2001).
Bakkers et al., Synthesis of InP Nanotubes; J. Am. Chem. Soc. 2003, 125; 3440-3441.
Kong et al., Semiconductor Zn-ZnO Core-Shell Nanoblets and Nanotubes; J. Phys. Chem. B. 2004, 108; 570-574.
Radosavljevic et al., High Performance of potassium n-doped carbon nanotube field-effect transistors; Appl. Phys. Lett. vol. 84, No. 18 3693-3695 (May 3, 2004).
Poznyak et al., Quantum Dot Chemiluminescence; Nano Letters 2004, vol. 4, No. 4, 693-698.
Talapin et al., “CdSe and CdSe/CdS Nanorod Solids”, J. Am. Chem. Soc. 2004, 126, 12984-12988.
Morgan et al., Phys. Rev. B. 66, 075339 (2002).
Yu et al., Science 300, 1277 (2003).
Yu et al., Phys. Rev. Lett. 92, 21602 (2004).
Javey et al, “Advancements in Complementary Carbon Nanotube Fields-Effects Transistors”, IEDM Conf. 2003.
Murray et al., e.g., IBM J. res. Dev. 45, 47-55 (2001).
Wind et al., Appl. Phys. Lett. 80, 3817(2002).
Derycke et al., Appl. Phys. Lett. 80, 2773 (2002).
Kong et al., Science 287, 622 (2001).
Greytak et al., Appl. Phys. Lett. 84, 4176 (2004).
Afzali et al., Polymer 38, 4439(1997).
Controlling Energy-Level Alignments at Carbon Nanotube/Au Contacts; Cui, X.; Freitag, M.;Martel, R.; Brus, L.; Avouris, P.; Nano Lett.; (Letter); 2003; 3(6); 783-787.
Designing PbSe Nanowores and Nanorings through Oriented Attachments of Nanoparticles; Cho, K.-S.; Talapin, D.V. ; gaschler, W.; Murray, C.B.; J.Am. Chem. Soc.; (Article); 2005; 127(19); 7140-7147.
Huang et al. , Science 291, 630 (2001).
Tang et al., J. Phys. Chem. B108, 6927 (2004).
Afzali-Ardakani Ali
Kagan Cherie R.
Murray Christopher B.
Sandstrom Robert L.
Talapin Dmitri V.
Connolly Bove & Lodge & Hutz LLP
International Business Machines - Corporation
Le Thao X.
Tran Thanh Y
Tuchman Ido
LandOfFree
Device comprising doped nano-component and method of forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Device comprising doped nano-component and method of forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device comprising doped nano-component and method of forming... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2772604