Device and method for thermally treating semiconductor wafers

Details Device and method for thermally treating semiconductor wafers Device and method for thermally treating semiconductor wafers

2006-12-19

2006-12-19

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S796000, C438S660000, C438S773000, C438S471000, C118S050100, C118S725000, C392S407000, C392S411000, C392S412000, C392S416000, C257SE21001

Reexamination Certificate

active

07151060

ABSTRACT:
A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.

REFERENCES:
patent: 5861609 (1999-01-01), Kaltenbrunner et al.
patent: 5872889 (1999-02-01), Kaltenbrunner et al.
patent: 6197702 (2001-03-01), Tanabe et al.
patent: 6228752 (2001-05-01), Miyano
patent: 6245605 (2001-06-01), Hwang et al.
patent: 2001/0014522 (2001-08-01), Weimer et al.
patent: 44 37 361 (1996-04-01), None
patent: 100 60 628 (2002-01-01), None
patent: 10060628 (2002-01-01), None
patent: 101 20 523 (2002-10-01), None
patent: 0 116 317 (1984-08-01), None
patent: 08031761 (1996-02-01), None
patent: 09306860 (1996-05-01), None
patent: 09306860 (1997-11-01), None
patent: WO 01/82350 (2001-11-01), None
patent: WO 01/82350 (2001-11-01), None
patent: WO02/089190 (2002-11-01), None

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