Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-07
2009-02-10
Tsai, H. Jey (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S654000, C438S725000, C257SE23127
Reexamination Certificate
active
07488661
ABSTRACT:
A device and method for improving adhesion for thin film layers includes applying a diblock copolymer on a surface where adhesion to subsequent layers is needed and curing the diblock copolymer. Pores are formed in the diblock copolymer by treating the diblock copolymer with a solvent. The surface is etched through the pores of the diblock copolymer to form adhesion promoting features. The diblock copolymer is removed, and a layer is deposited on the surface wherein the adhesion promoting features are employed to promote adhesion between the layer and the surface.
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Gaidis Michael Christopher
Milkove Keith Raymond
International Business Machines - Corporation
Keusey, Tutunjian & & Bitetto, P.C.
Tsai H. Jey
Tuchman Ido
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