Device and method for etching a substrate using an...

Details Device and method for etching a substrate using an... Device and method for etching a substrate using an...

2005-05-31

2005-05-31

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S067000, C216S068000, C438S706000, C438S707000, C156S345480, C156S345490

Reexamination Certificate

active

06899817

ABSTRACT:
A method and a suitable device for carrying out this method is proposed, for etching a substrate (10), especially a silicon element, with the aid of an inductively coupled plasma (14). For this purpose, a high frequency electromagnetic alternating field is generated, which produces an inductively coupled plasma (14) from reactive particles in a reactor (15). In this connection, the inductively coupled plasma (14) comes about by the action of the high frequency electromagnetic alternating field upon a reactive gas. Furthermore, a device, in particular a magnetic field coil (21) is provided which produces a static or timewise varying magnetic field between the substrate (10) and the ICP source (13). For this, the magnetic field is oriented in such a way that its direction is at least approximately or predominantly parallel to the direction defined by the line connecting the substrate (10) and the inductively coupled plasma (14).

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Patent Abstracts of Japan, vol. 1998, No. 08, Jun. 30, 1998.

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