Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2005-01-04
2005-01-04
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
With measuring or testing
C438S011000, C438S018000, C257S048000, C365S201000, C365S189030
Reexamination Certificate
active
06838296
ABSTRACT:
A test device and method for detecting alignment of deep trench capacitors and active areas in DRAM devices. A quadrilateral active area is disposed in the scribe line region, with four equilaterals and four vertex angles. Parallel first and second deep trench capacitors are disposed in the quadrilateral active area. The first deep trench capacitor has a first surface aligned with a second surface of the second deep trench capacitor. The first and second vertex angles of the four vertex angles have a diagonal line essentially perpendicular to the first and second surfaces. The first and second vertex angles are a predetermined distance from the first surface and the second surface respectively.
REFERENCES:
patent: 6693834 (2004-02-01), Wu et al.
patent: 20040029301 (2004-02-01), Wu et al.
patent: 20040076056 (2004-04-01), Chang et al.
patent: 20040082087 (2004-04-01), Wu et al.
Huang Chien-Chang
Jiang Bo-Ching
Ting Yu-Wei
Wu Tie-Jiang
Keshavan Belur V
Nanya Technology Corporation
Quintero Law Office
Smith Matthew
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