Device and method for depositing one or more layers on a...

Details Device and method for depositing one or more layers on a... Device and method for depositing one or more layers on a...

2005-02-01

2005-02-01

Hiteshew, Felisa (Department: 1765)

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

C117S086000, C117S089000, C117S090000, C117S094000, C117S102000

Reexamination Certificate

active

06849241

ABSTRACT:
The invention relates to a device and method for depositing one or more layers onto at least one substrate placed inside a reaction chamber. The layers are deposited while using a liquid or solid starting material for one of the reaction gases utilized, which are fed via a gas admission unit to the reaction chamber where they condense or epitaxially grow on the substrate. The gas admission unit comprises a multitude of buffer volumes in which the reaction gasses enter separate of one another, and exit through closely arranged outlet openings while also being spatially separate of one another. The temperature of reaction gases is moderated while passing through the gas admission unit.

REFERENCES:
patent: 5595606 (1997-01-01), Fujikawa et al.
patent: 5871586 (1999-02-01), Crawley et al.
patent: 5976261 (1999-11-01), Moslehi et al.
patent: 198 13 523 (1999-10-01), None
patent: 0 821 084 (1998-01-01), None

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