Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-10-30
2007-10-30
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S706000, C438S728000, C156S345420
Reexamination Certificate
active
10691108
ABSTRACT:
A method and a device suitable for its execution are provided for the anisotropic plasma etching of a substrate, especially a silicon element. The device has a chamber and a plasma source for generating a high-frequency electromagnetic alternating field and a reaction region for generating a plasma having reactive species inside the chamber, the reactive species being created by the action of the alternating field upon an etching gas, and a passivating gas that is especially simultaneously introduced but spatially separated from it. Furthermore, an arrangement is provided, by the use of which, in the reaction region, at least a first zone that has etching gas applied to it, and at least a second zone that has passivating gas applied to it, are defined. In addition to this, the device has a mixing region downstream from the reaction region, using which, reactive species generated from the etching gas in the first zone and reactive species generated from the passivating gas in the second zone are intermixed with each other before acting upon the substrate.
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Breitschwerdt Klaus
Kutsch Bernd
Laermer Franz
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