Device and fabricating method of non-volatile memory

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

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438201, 438211, 438303, 438524, 438700, 257315, 257316, 257401, H01L 2972

Patent

active

060372214

ABSTRACT:
A non-volatile memory device includes a substrate, a projection having two sides formed on the substrate, a floating gate formed on the projection, a control gate formed on the substrate including the floating gate, a first impurity region formed in the substrate extended from one side of the projection, and a second impurity region formed in the substrate at the other side of the projection and in the substrate extended from the other side of the projection.

REFERENCES:
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5880499 (1999-03-01), Oyama

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