Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-02-03
2000-03-14
Wojciechowicz, Edward
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438201, 438211, 438303, 438524, 438700, 257315, 257316, 257401, H01L 2972
Patent
active
060372214
ABSTRACT:
A non-volatile memory device includes a substrate, a projection having two sides formed on the substrate, a floating gate formed on the projection, a control gate formed on the substrate including the floating gate, a first impurity region formed in the substrate extended from one side of the projection, and a second impurity region formed in the substrate at the other side of the projection and in the substrate extended from the other side of the projection.
REFERENCES:
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5880499 (1999-03-01), Oyama
Lee Sung Chul
Lim Min Gyu
LG Semicon Co. Ltd.
Wojciechowicz Edward
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