Device and a method for forming a capacitor device

Details Device and a method for forming a capacitor device Device and a method for forming a capacitor device

2006-05-09

2006-05-09

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S396000

Reexamination Certificate

active

07041551

ABSTRACT:
A device and method for forming a capacitor device comprises forming a substrate, forming a first interlayer dielectric layer on the substrate and forming two or more contact plugs through the substrate. A conducting layer is formed on the first interlayer dielectric layer and an electrode is formed on alternate ones of the contact plugs by etching the conducting layer. The etched electrodes are then coated with a ferroelectric layer. The ferroelectric layer is etched from the surfaces separating the contact plugs and additional electrodes are created by filling the spaces between the electrodes on alternate ones of the contact plugs with a conductive material to establish electrical contact between the plugs and the electrodes.

REFERENCES:
patent: 6198652 (2001-03-01), Kawakubo et al.
patent: 6259125 (2001-07-01), Fazan et al.
patent: 6300652 (2001-10-01), Risch et al.
patent: 6448597 (2002-09-01), Kasai et al.
patent: 6699725 (2004-03-01), Lee
patent: 2002/0081790 (2002-06-01), Honigschmid et al.
patent: 2003/0058700 (2003-03-01), Bruchhaus et al.
patent: 101 31 624 (2003-01-01), None
patent: 101 31 626 (2003-01-01), None

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