Coating apparatus – Gas or vapor deposition – With treating means
Patent
1995-08-04
1998-01-06
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
117951, C23C 1600
Patent
active
057049858
ABSTRACT:
A device for epitaxially growing objects of SiC by Chemical Vapor Deposition on a substrate comprises a substantially cylindrical susceptor having continuous circumferential walls with a substantially uniform thickness surrounding a chamber receiving the substrate, the walls being surrounded by thermal insulation. The circumferential susceptor walls and thereby the substrate and a gas mixture fed to the substrate for the growth are heated to a temperature level in the range of 2000.degree.-2500.degree. C. at which sublimation of the grown material starts to considerably increase. The gas mixture is fed into the susceptor with a composition and at a rate that ensures a positive growth.
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Hallin Christer
Janzen Erik
Kordina Olle
ABB Research Ltd.
Bueker Richard
Lund Jeffrie R.
Okmetic Ltd.
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