Development hastened stability of titanium nitride for APM...

Details Development hastened stability of titanium nitride for APM... Development hastened stability of titanium nitride for APM...

2005-10-04

2005-10-04

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

With measuring or testing

C438S720000, C438S715000, C438S719000

Reexamination Certificate

active

06951767

ABSTRACT:
A method of fabricating a stabilized TiN control wafer comprising the following steps. A silicon substrate is provided having a silicon oxide layer formed thereover. An initial TiN layer is formed over the silicon oxide layer. The silicon substrate is placed in an atmosphere having ambient oxygen for from about 22 to 26 hours to form a rested TiN layer. The rested TiN layer is heated at a temperature of from about 115 to 125° C. for from about 85 to 95 seconds to form a heat treated TiN layer, whereby the heat treated TiN layer is stabilized to form the stabilized TiN control wafer.

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Milosavljevic et al., “Influence of arsenic ion implantation on the formation of Ti silicides”, IEEE, 1995, vol. 46, No. 8-10, pps. 1009-12.

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