Detection of residual liner materials after polishing in...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Reexamination Certificate

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07361584

ABSTRACT:
A method and structure for the detection of residual liner materials after polishing in a damascene processes includes an integrated circuit comprising a substrate; a dielectric layer over the substrate; a marker layer over the dielectric layer; a liner over the marker layer and dielectric layer; and a metal layer over the liner, wherein the marker layer comprises ultraviolet detectable material, which upon excitation by an ultraviolet ray signals an absence of the metal layer and the liner over the marker layer. Moreover, the marker layer comprises a separate layer from the dielectric layer. Additionally, the ultraviolet detectable material comprises fluorescent material or phosphorescent material.

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