Design structures incorporating interconnect structures with...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S716000, C438S618000, C438S640000, C438S643000, C438S689000, C257SE21035

Reexamination Certificate

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07494916

ABSTRACT:
Design structure embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes an interconnect structure with a liner formed on roughened dielectric material in an insulating layer and a conformal liner repair layer bridging that breaches in the liner. The conformal liner repair layer is formed of a conductive material, such as a cobalt-containing material. The conformal liner repair layer may be particularly useful for repairing discontinuities in a conductive liner disposed on roughened dielectric material bordering the trenches and vias of damascene interconnect structures.

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patent: 2005/0112864 (2005-05-01), Clevenger et al.
patent: 2006216787 (2006-08-01), None

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