Design structure for coupling noise prevention

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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Details

C438S348000, C438S361000, C257SE23114

Reexamination Certificate

active

07615841

ABSTRACT:
A semiconductor structure for preventing coupling noise in integrated circuits and a method of forming the same are provided. The semiconductor structure includes a signal-grounded seal ring. The seal ring includes a plurality of metal lines, each in a respective metal layer and surrounding a circuit region of the semiconductor chip, a plurality of vias connecting respective metal lines, and a plurality of dielectric layers isolating each metal layer from any other metal layers. The seal ring may further include additional seal rings formed inside or outside the seal ring. The semiconductor structure may include laser fuses and protective rings. The protective rings are preferably signal grounded. Cross talk between sub circuits in a chip can be reduced by forming a seal ring extension between the sub circuits.

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