Design propagation delay measurement device

Details Design propagation delay measurement device Design propagation delay measurement device

1998-10-08

2000-07-04

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257316, 257318, 257320, 257321, 438 14, 438 15, 438 16, 438 17, 438 18, H01L 31062, H01L 31113, H01L 2976

Patent

active

060842679

ABSTRACT:
A semiconductor integrated circuit comprises a substrate including a plurality of transistors, and a conductive line for coupling at least two of the transistors with each other, each transistor comprising a drain diffusion region, a source diffusion region, a gate region, and a test diffusion region within the substrate, the test diffusion region being electrically coupled to a metal line within the semiconductor integrated circuit for establishing an indication of the voltage at the probing diffusion region.

REFERENCES:
patent: 5627083 (1997-05-01), Tounai
patent: 5886378 (1999-03-01), WAng

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