Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1992-03-19
1993-12-21
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429812, 20429819, C23C 1434
Patent
active
052718174
ABSTRACT:
A sputter target assembly includes a main target plate formed of a refractory material, such as Ti/W, which provides a target surface which is bombarded by ions and from which is ejected refractory material for thin-film deposition. A removable center piece is formed of a refractory material and fits within a recess formed in the center region of the main target plate to provide a surface which is substantially coplanar with the target surface of the main target. The removable center piece is attached to the main target plate with a screw formed of a refractory material. The main target plate is bonded to a backing plate for cooling.
REFERENCES:
patent: 4421628 (1983-12-01), Quaderer
patent: 4448652 (1984-05-01), Pachonik
patent: 4485000 (1984-11-01), Kawaguchi et al.
patent: 4966676 (1990-10-01), Fukasawa et al.
patent: 5066381 (1991-11-01), Ohta et al.
Vossen et al., "Thin Film Processes", Academic Press, New York, 1978, p. 41.
Brugge Hunter B.
Lam Kin-Sang
King Patrick T.
Nguyen Nam
VLSI Technology Inc.
LandOfFree
Design for sputter targets to reduce defects in refractory metal does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Design for sputter targets to reduce defects in refractory metal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Design for sputter targets to reduce defects in refractory metal will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-306427