Deposition of super thin PECVD SiO.sub.2 in multiple deposition

Details Deposition of super thin PECVD SiO.sub.2 in multiple deposition Deposition of super thin PECVD SiO.sub.2 in multiple deposition

1997-03-07

1999-11-16

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

219405, 219390, 219411, 118729, 118725, H01L 2358

Patent

active

059863293

ABSTRACT:
The present invention provides a method and system for depositing an oxide layer onto a semiconductor device during fabrication by using a deposition chamber, the method comprising the steps of providing a temperature of less than approximately 450 degrees Celsius in the deposition chamber; allowing the semiconductor wafer to soak up the temperature of less than approximately 450 degrees Celsius for approximately 30 seconds; and depositing a layer of oxide onto a semiconductor wafer, wherein a thickness of the oxide layer is not greater than approximately 200 Angstroms.

REFERENCES:
patent: 5683518 (1997-11-01), Moore et al.
patent: 5710407 (1998-01-01), Moore et al.
patent: 5770469 (1998-06-01), Uram et al.

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