Deposition of super thin PECVD SiO.sub.2 in multiple deposition

Details Deposition of super thin PECVD SiO.sub.2 in multiple deposition Deposition of super thin PECVD SiO.sub.2 in multiple deposition

1999-06-21

2000-09-12

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438765, 438771, 438776, 438787, H01L 2102

Patent

active

061177997

ABSTRACT:
The present invention provides a method and system for depositing an oxide layer onto a semiconductor device during fabrication by using a deposition chamber, the method comprising the steps of providing a temperature of less than approximately 450 degrees Celsius in the deposition chamber; allowing the semiconductor wafer to soak up the temperature of less than approximately 450 degrees Celsius for approximately 30 seconds; and depositing a layer of oxide onto a semiconductor wafer, wherein a thickness of the oxide layer is not greater than approximately 200 Angstroms.

REFERENCES:
patent: 5736423 (1998-04-01), Ngo

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