Deposition of silicon oxide films using alkylsilane liquid sourc

Details Deposition of silicon oxide films using alkylsilane liquid sourc Deposition of silicon oxide films using alkylsilane liquid sourc

1977-10-28

1991-01-01

Morgenstern, Norman

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

4272551, 4272552, C23C 1640, C23C 1646

Patent

active

049817248

ABSTRACT:
A chemical vapor deposition process for depositing silicon dioxide comprising the steps of heating a substrate upon which deposition is desired to a temperature of from about 325.degree. C. to about 700.degree. C. in a vacuum having a pressure of from about 0.1 to about 1.5 torr, and introducing a silane selected from the group consisting of alkylsilane, arylsilane and araylkylsilane wherein the alkyl-, aryl- or aralkyl- moiety comprises from 2-6 carbons, and oxygen or carbon dioxide into the vacuum.

REFERENCES:
Avigal et al., J. Elec. Soc., vol. 121, No. 8, pp. 1103-1107.
Bunshah et al., Deposition Technologies for Films & Coatings, (Noyes, Park Ridge, N.J.), c. 1983, pp. 351-356.
Vossen et al., Thin Film Processes, (Academic Press, N.Y.), c. 1978, pp. 274-275.

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