Deposition of silicon nitrides by plasma-enhanced chemical vapor

Details Deposition of silicon nitrides by plasma-enhanced chemical vapor Deposition of silicon nitrides by plasma-enhanced chemical vapor

1996-02-12

1997-01-07

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272552, 427294, 427585, H05H 124

Patent

active

055914942

ABSTRACT:
A silicon nitride or silicon oxynitride film is deposited by plasma enhanced chemical vapor deposition from a precursor gas mixture of a silane, a nitrogen-containing organosilane and a nitrogen-containing gas at low temperatures of 300.degree.-400.degree. C. and pressure of 1-10 Torr. The silicon nitride films have low carbon content and low hydrogen content, low wet etch rates and they form conformal films over stepped topography.

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Industrial Water Pollution Control W. Wesley Eckenfelder, Jr. McGraw-Hill Book Company (No Date Available).

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