Deposition of silicon nitride films from azidosilane sources

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427 531, 4272481, 427255, 4272551, B05D 306

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active

049922998

ABSTRACT:
A method of producing a silicon nitride film on the surface of a substrate by thermal decomposition at said surface of a compound of the class ##STR1## wherein R.sub.1 R.sub.2 and R.sub.3 are hydrogen azido, 1 to 6 carbon alkyl, phenyl, or 7 to 10 carbon alkaryl, at least one of R.sub.1, R.sub.2, and R.sub.3 being 1-6 carbon alkyl, phenyl, or 7 to 10 carbon alkaryl, ethyltriazidosilane being uniquely superior, is disclosed.

REFERENCES:
patent: 4863755 (1989-09-01), Heoo et al.

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