Deposition of silicon nitride by plasma-enchanced chemical vapor

Details Deposition of silicon nitride by plasma-enchanced chemical vapor Deposition of silicon nitride by plasma-enchanced chemical vapor

1995-07-26

1996-04-16

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427294, 4272552, 427585, H05H 124

Patent

active

055080677

ABSTRACT:
A silicon nitride or silicon oxynitride film is deposited by plasma enhanced chemical vapor deposition from a precursor gas mixture of a silane, a nitrogen-containing organosilane and a nitrogen-containing gas at low temperatures of 300.degree.-400.degree. C. and pressure of 1-10 Torr. The silicon nitride films have low carbon content and low hydrogen content, low wet etch rates and they form conformal films over stepped topography.

REFERENCES:
patent: 4395438 (1983-07-01), Chiang
patent: 4699825 (1987-10-01), Sakai et al.
patent: 4943450 (1990-07-01), Sarin
patent: 5043224 (1991-08-01), Jaccodine et al.
European Search Report for EP 94115055.9, Dec. 1994.

Affiliated with

Also associated with

Rating

Deposition of silicon nitride by plasma-enchanced chemical vapor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deposition of silicon nitride by plasma-enchanced chemical vapor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposition of silicon nitride by plasma-enchanced chemical vapor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-323840