Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2002-04-05
2008-10-21
Garber, Charles D. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S149000, C438S485000, C438S761000, C257SE21561
Reexamination Certificate
active
07439191
ABSTRACT:
A method of silicon layer deposition using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a silicon-containing precursor and a reducing gas on a substrate structure. Thin film transistors, such as for example a bottom-gate transistor or a top-gate transistor, including one or more silicon layers may, be formed using such cyclical deposition techniques.
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Harshbarger William Reid
Law Kam
Maydan Dan
Shang Quanyuan
Applied Materials Inc.
Garber Charles D.
Isaac Stanetta D
Patterson & Sheridan LLP
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