Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-04-24
2007-04-24
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S404000, C438S154000
Reexamination Certificate
active
10897985
ABSTRACT:
Methods are provided for producing SiGe-on-insulator structures and for forming strain-relaxed SiGe layers on silicon while minimizing defects. Amorphous SiGe layers are deposited by CVD from trisilane and GeH4. The amorphous SiGe layers are recrystallized over silicon by melt or solid phase epitaxy (SPE) processes. The melt processes preferably also cause diffusion of germanium to dilute the overall germanium content and essentially consume the silicon overlying the insulator. The SPE process can be conducted with or without diffusion of germanium into the underlying silicon, and so is applicable to SOI as well as conventional semiconductor substrates.
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ASM America Inc.
Knobbe Martens Olson & Bear LLP
Schillinger Laura M.
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