Deposition of silicon-containing films from hexachlorodisilane

Details Deposition of silicon-containing films from hexachlorodisilane Deposition of silicon-containing films from hexachlorodisilane

2003-09-30

2008-12-23

Nguyen, Tuan H (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S481000

Reexamination Certificate

active

07468311

ABSTRACT:
A method is provided for depositing a silicon-containing film on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed on a substrate by providing a substrate in a process chamber of a processing system, heating the substrate, and exposing a hexachlorodisilane (HCD) process gas to the substrate. The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate. A processing tool containing a processing system for forming a silicon-containing film on s substrate using a HCD process gas is provided.

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