Deposition of silicon at temperatures above its melting point

Details Deposition of silicon at temperatures above its melting point Deposition of silicon at temperatures above its melting point

1982-12-22

1985-10-15

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156617SP, 423349, C30B 1504

Patent

active

045472580

ABSTRACT:
Liquid silicon is deposited on a high surface area column of silicon nitride particles, by hydrogen decomposition of trichlorosilane. This is accomplished in an environment heated to a temperature in excess of the melting point of silicon. After deposition, the liquid silicon flows by gravity to a collection point. Preferably a liquid transfer system moves the silicon directly to a crystal pulling operation. The liquid transfer to immediate pulling conserves energy and allows for continual withdrawal of melt from the reactor. The immediate pulling provides additional purification and the crystal thus pulled is preferably used as feedstock for a final crystal pulling operation.

REFERENCES:
patent: 4242697 (1980-12-01), Berthold et al.
patent: 4246249 (1981-01-01), Dawless
patent: 4282184 (1981-08-01), Fiegl et al.
patent: 4314525 (1982-02-01), Hsu et al.
patent: 4353875 (1982-10-01), Yancey
"Crystal Growth", Second Edition, edited, by Brian R. Pamplin, Pergamon Press, 198, pp. 172-174.
Bawa et al., "Hydrogen Reduction of Chlorosilanes" SC Engineering Journal Winter 1980, pp. 42-45.
Jewett et al., "Low-Cost Solar Array Project Task I-Silicon Material Gaseous Melt Replenishment System" DOE/JPL/955269-80/6, Energy Materials Corporation, Harvard, MA.

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