Deposition of nano-crystal silicon using a single wafer chamber

Details Deposition of nano-crystal silicon using a single wafer chamber Deposition of nano-crystal silicon using a single wafer chamber

2007-09-04

2007-09-04

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C438S758000, C977S814000

Reexamination Certificate

active

10898094

ABSTRACT:
Numerous embodiments of a method for depositing a layer of nano-crystal silicon on a substrate. In one embodiment of the present invention, a substrate is placed in a single wafer chamber and heated to a temperature between about 300° C. to about 490° C. A silicon source is also fed into the single wafer chamber.

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