Deposition of metal films and clusters by reactions of compounds

Details Deposition of metal films and clusters by reactions of compounds Deposition of metal films and clusters by reactions of compounds

1980-03-03

1982-04-13

Newsome, John H.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

346107R, 346158, 427 38, 427 531, 427 541, 430298, 430 31, 427 431, B05D 306, H05K 318

Patent

active

043248543

ABSTRACT:
A thin film of material such as metal is deposited on the surface of a substrate by placing a substrate (22) into a chamber (10) containing holder (12) cooled by heat exchanger 18. A beam (56) of U.V. light from the illumination source (42) is projected through monochromator (43), mask (46) and lens (16) onto a selected area (58) of the substrate at an energy level exceeding the photoemission threshold of the surface. A slow electron (60) is ejected from the surface into the capture zone (62). A compound AB such as iron pentacarbonyl from supply (30) is leaked into the chamber (10), enters the capture zone (60) to form a highly reactive deposition fragment A.sup.- which attaches to the surface and a dissociation fragment which is evacuated through outlet (14). The deposited fragment may further dissociate to form metal deposit.

REFERENCES:
patent: 3386823 (1968-06-01), Keller et al.
patent: 3551213 (1970-12-01), Boyle
patent: 3660087 (1972-05-01), Kaspaul et al.

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