Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1996-08-26
1998-12-22
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427109, 4272551, 4272552, 4272557, 438788, 438149, 148DIG53, B05D 306, H01L 21316
Patent
active
058516026
ABSTRACT:
A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas mixture of silane and nitrous oxide, the latter at a high rate, at a pressure of at least about 0.8 torr and a temperature of from about 250.degree. to 350.degree. C. The effective volume of the reaction region between the gas manifold inlet and the substrate during processing is kept small.
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Batey, et al., "Low temperature deposition of high quality silicon dioxide by plasma enhanced chemical vapor deposition", J. Appl. Phys. 60 (9), Nov. 1986, pp. 3136-3145.
Pande, et al., High mobility n-channel metal oxide semiconductor field effect transistors based on SiO2 -InP interface, J. Appl. Phys. 55 (8), Apr. 1984, pp. 3109-3114.
Feng Jeffrey
Law Kam
Robertson Robert
Applied Materials Inc.
King Roy V.
Wieczorek Mark D.
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