Deposition of high quality conformal silicon oxide thin films fo

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427109, 4272551, 4272552, 4272557, 438788, 438149, 148DIG53, B05D 306, H01L 21316

Patent

active

058516026

ABSTRACT:
A plasma enhanced chemical vapor deposition process for depositing conformal silicon oxide thin films useful to make thin film transistors which have stable electrical properties and low charge centers onto a substrate comprising flowing a precursor gas mixture of silane and nitrous oxide, the latter at a high rate, at a pressure of at least about 0.8 torr and a temperature of from about 250.degree. to 350.degree. C. The effective volume of the reaction region between the gas manifold inlet and the substrate during processing is kept small.

REFERENCES:
patent: 4668365 (1987-05-01), Foster et al.
patent: 4854263 (1989-08-01), Chang et al.
patent: 4892753 (1990-01-01), Wang et al.
patent: 4987856 (1991-01-01), Hey et al.
Batey, et al., "Low temperature deposition of high quality silicon dioxide by plasma enhanced chemical vapor deposition", J. Appl. Phys. 60 (9), Nov. 1986, pp. 3136-3145.
Pande, et al., High mobility n-channel metal oxide semiconductor field effect transistors based on SiO2 -InP interface, J. Appl. Phys. 55 (8), Apr. 1984, pp. 3109-3114.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Deposition of high quality conformal silicon oxide thin films fo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deposition of high quality conformal silicon oxide thin films fo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposition of high quality conformal silicon oxide thin films fo will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2043838

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.