Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-01-03
2006-01-03
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S785000, C438S198000, C438S199000, C438S238000
Reexamination Certificate
active
06982230
ABSTRACT:
A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid; vaporizing at least the alkoxide and depositing the vaporized component at a temperature of greater than 400° C. The resultant film is dense, microcrystalline and is capable of self-passivation when treated in a hydrogen plasma or forming gas anneal.
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Cabral, Jr. Cyril
Callegari Alessandro C.
Gribelyuk Michael A.
Jamison Paul C.
Lacey Dianne L.
Fourson George
Pham Thanh V.
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