Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – By application of corpuscular or electromagnetic radiation
Reissue Patent
2001-06-29
2008-01-01
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
By application of corpuscular or electromagnetic radiation
C438S557000, C438S558000
Reissue Patent
active
RE039988
ABSTRACT:
A semiconductor doping process which enhances the dopant incorporation achievable using the Gas Immersion Laser Doping (GILD) technique. The enhanced doping is achieved by first depositing a thin layer of dopant atoms on a semiconductor surface followed by exposure to one or more pulses from either a laser or an ion-beam which melt a portion of the semiconductor to a desired depth, thus causing the dopant atoms to be incorporated into the molten region. After the molten region recrystallizes the dopant atoms are electrically active. The dopant atoms are deposited by plasma enhanced chemical vapor deposition (PECVD) or other known deposition techniques.
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Carey Paul G.
Ellingboe Albert R.
Smith Patrick M.
Wickboldt Paul
Doty Heather
Jr. Carl Whitehead
Lee John H.
Staggs Michael C.
The Regents of the University of California
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