Deposition of diffusion barrier

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21508

Reexamination Certificate

active

10683202

ABSTRACT:
The invention provides a stacked wafer structure with decreased failures. In one embodiment, there is a barrier layer deposited on exposed surfaces of conductors that extend across a distance between first and second device structures. The barrier layer may prevent diffusion and electromigration of the conductor material, which may decrease incidences of shorts and voids in the stacked wafer structure.

REFERENCES:
patent: 5923539 (1999-07-01), Matsui et al.
patent: 5935430 (1999-08-01), Craig
patent: 6406636 (2002-06-01), Vaganov
patent: 6661085 (2003-12-01), Kellar et al.
patent: 6667225 (2003-12-01), Hau-Riege et al.
patent: 6762076 (2004-07-01), Kim et al.
patent: 6794288 (2004-09-01), Kolics et al.
patent: 6812132 (2004-11-01), Ramachandrarao et al.
patent: 6897125 (2005-05-01), Morrow et al.
patent: 6930391 (2005-08-01), Kloster et al.
patent: 6946384 (2005-09-01), Kloster et al.
patent: 2002/0126459 (2002-09-01), Albert et al.
patent: 2003/0054626 (2003-03-01), Kobayashi et al.
patent: 2003/0148590 (2003-08-01), Kellar et al.
patent: 2004/0014308 (2004-01-01), Kellar et al.
patent: 2005/0003650 (2005-01-01), Ramanathan et al.
patent: 2005/0194695 (2005-09-01), Lin et al.
patent: 2006/0030081 (2006-02-01), Connell et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Deposition of diffusion barrier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deposition of diffusion barrier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposition of diffusion barrier will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3754932

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.