Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2007-03-06
2007-03-06
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S486000, C438S482000, C438S489000, C257SE21497
Reexamination Certificate
active
10219687
ABSTRACT:
Chemical vapor deposition methods are used to deposit amorphous silicon-containing films over various substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Preferably, the deposited amorphous silicon-containing film is annealed to produce crystalline regions over all or part of an underlying substrate.
REFERENCES:
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4495218 (1985-01-01), Azuma et al.
patent: 4557794 (1985-12-01), McGinn et al.
patent: 4578142 (1986-03-01), Corboy, Jr. et al.
patent: 4585671 (1986-04-01), Kitagawa et al.
patent: 4615762 (1986-10-01), Jastrzebski et al.
patent: 4684542 (1987-08-01), Jasinski et al.
patent: 4704186 (1987-11-01), Jastrzebski
patent: 4755481 (1988-07-01), Faraone
patent: 4891092 (1990-01-01), Jastrzebski
patent: 4966861 (1990-10-01), Mieno et al.
patent: 5091761 (1992-02-01), Hiraiwa et al.
patent: 5110757 (1992-05-01), Arst et al.
patent: 5192714 (1993-03-01), Suguro et al.
patent: 5194398 (1993-03-01), Miyachi et al.
patent: 5227329 (1993-07-01), Kobayashi et al.
patent: 5385863 (1995-01-01), Tatsumi et al.
patent: 5389570 (1995-02-01), Shiozawa
patent: 5453858 (1995-09-01), Yamazaki
patent: 5461250 (1995-10-01), Burghartz et al.
patent: 5563093 (1996-10-01), Koda et al.
patent: 5607724 (1997-03-01), Beinglass et al.
patent: 5614257 (1997-03-01), Beinglass et al.
patent: 5648293 (1997-07-01), Hayama et al.
patent: 5654237 (1997-08-01), Suguro et al.
patent: 5656531 (1997-08-01), Thakur et al.
patent: 5695819 (1997-12-01), Beinglass et al.
patent: 5700520 (1997-12-01), Beinglass et al.
patent: 5786027 (1998-07-01), Rolfson
patent: 5789030 (1998-08-01), Rolfson
patent: 5837580 (1998-11-01), Thakur et al.
patent: 5869389 (1999-02-01), Ping et al.
patent: 5874129 (1999-02-01), Beinglass et al.
patent: 5876797 (1999-03-01), Beinglass et al.
patent: 5885869 (1999-03-01), Turner et al.
patent: 5959326 (1999-09-01), Aiso et al.
patent: 6013922 (2000-01-01), Ueda et al.
patent: 6027705 (2000-02-01), Kitsuno et al.
patent: 6083810 (2000-07-01), Obeng et al.
patent: 6121081 (2000-09-01), Thakur et al.
patent: 6159828 (2000-12-01), Ping et al.
patent: 6162667 (2000-12-01), Funai et al.
patent: 6171662 (2001-01-01), Nakao
patent: 6197669 (2001-03-01), Twu et al.
patent: 6197694 (2001-03-01), Beinglass
patent: 6235568 (2001-05-01), Murthy et al.
patent: 6252284 (2001-06-01), Muller et al.
patent: 6252295 (2001-06-01), Cote et al.
patent: 6274463 (2001-08-01), Chaiken
patent: 6346732 (2002-02-01), Mizushima et al.
patent: 6365465 (2002-04-01), Chan et al.
patent: 6365479 (2002-04-01), U'Ren
patent: 6372559 (2002-04-01), Crowder et al.
patent: 6900115 (2005-05-01), Todd
patent: 2002/0011612 (2002-01-01), Heida
patent: 2002/0036290 (2002-03-01), Inaba et al.
patent: 2002/0098627 (2002-07-01), Pomarede et al.
patent: 2002/0168868 (2002-11-01), Todd
patent: 0 368 651 (1990-05-01), None
patent: 57209810 (1982-12-01), None
patent: 59078918 (1984-05-01), None
patent: 59078919 (1984-05-01), None
patent: 60043485 (1985-03-01), None
patent: S60-43485 (1985-03-01), None
patent: 60257703 (1985-11-01), None
patent: 61153277 (1986-07-01), None
patent: 62076612 (1987-04-01), None
patent: 63003414 (1988-01-01), None
patent: 63003463 (1988-01-01), None
patent: 63166502 (1988-07-01), None
patent: 01217956 (1989-08-01), None
patent: 01268064 (1989-10-01), None
patent: 02155225 (1990-06-01), None
patent: H 02-155225 (1990-06-01), None
patent: 03091239 (1991-04-01), None
patent: H3-91239 (1991-04-01), None
patent: 03185817 (1991-08-01), None
patent: 03187215 (1991-08-01), None
patent: H3-185817 (1991-08-01), None
patent: H3-187215 (1991-08-01), None
patent: 03292741 (1991-12-01), None
patent: 04323834 (1992-11-01), None
patent: 05021378 (1993-01-01), None
patent: 05062911 (1993-03-01), None
patent: H5-62911 (1993-03-01), None
patent: 07249618 (1995-09-01), None
patent: 08242006 (1996-09-01), None
patent: WO 02/064853 (2002-08-01), None
patent: WO 02/065508 (2002-08-01), None
patent: WO 02/065516 (2002-08-01), None
patent: WO 02/065517 (2002-08-01), None
patent: WO 02/065525 (2002-08-01), None
patent: WO 02/080244 (2002-10-01), None
International Search Report issued by the PCT on Mar. 3, 2004.
Edwards, C., “Submicron zone catalyst for end of bulk CMOS,” EETimes, May 12, 2001.
Hergenrother, J.M., “The Vertical Replaement-Gate (VRG) MOFSET: A 50-nm Vertical MOFSET with Lithography-Independent Gate Length,” IEDM Technical Digest, 1999.
Huang, X. et al., “Sub 50-nm FinFET: PMOS,” IEDM Technical Digest, 1999.
Van Zant, Peter, “Microchip Fabrication,” 4thEd., McGraw Hill, New York, (2000), pp. 364-365.
Van Zant, Peter, “Microchip Fabrication,” 4thEd., McGraw Hill, New York, (2000), p. 380-382.
Wong, H.S., “Beyond the Conventional Transistor,” IBM J. Res. & Dev., vol. 46, No. 2/3, Mar./May 2002.
ASM America Inc.
Knobbe Martens Olson & Bear LLP
Trinh Michael
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