Deposition methods and apparatus

Details Deposition methods and apparatus Deposition methods and apparatus

2005-09-27

2005-09-27

VerSteeg, Steven (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S298200, C204S298230, C204S298280, C427S585000, C216S058000, C118S730000, C156S345550

Reexamination Certificate

active

06949170

ABSTRACT:
A method and apparatus for processing a thin film on a substrate. The method involves locating the substrate in a first rotational position a location opposed to a process station. The process station has a first axis and is arranged for processing the substrate about that axis. The substrate location is symmetrical about a second axis parallel to but offset from the first axis. The substrate is rotated about an axis generally orthogonal and passing through the wafer location to a second rotational position after an initial process and further processing takes place when the substrate is in the second rotational position.

REFERENCES:
patent: 3858547 (1975-01-01), Bergfelt
patent: 4002141 (1977-01-01), Shrader
patent: 4108107 (1978-08-01), Scheuermann
patent: 4756815 (1988-07-01), Turner et al.
patent: 2001/0053043 (2001-12-01), Kanazawa et al.
patent: 2005/0003196 (2005-01-01), Smith
patent: 39 34 887 (1990-04-01), None
patent: 2002-20864 (2002-01-01), None

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