Deposition methods

Details Deposition methods Deposition methods

2005-05-11

2008-08-05

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S685000, C438S758000, C257SE21160

Reexamination Certificate

active

07407892

ABSTRACT:
The invention includes deposition methods and apparatuses which can be utilized during atomic layer deposition or chemical vapor deposition. A heated surface is provided between a stack of semiconductor substrates and a precursor inlet, and configured so that problematic side reactions occur proximate the heated surface rather than proximate the semiconductor substrates. The precursor inlet can be one of a plurality of precursor inlets, and the heated surface can be one of a plurality of heated surfaces.

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patent: WO 2004/015742 (2004-02-01), None
patent: PCT/US2006/017063 (2006-05-01), None

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