Deposition methods

Details Deposition methods Deposition methods

2007-08-07

2007-08-07

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S479000, C257SE21584

Reexamination Certificate

active

11326739

ABSTRACT:
The invention includes a method for selective deposition of semiconductor material. A substrate is placed within a reaction chamber. The substrate comprises a first surface and a second surface. The first and second surfaces are exposed to a semiconductor material precursor under conditions in which growth of semiconductor material from the precursor comprises a lag phase prior to a growth phase, and under which it takes longer for the growth phase to initiate on the second surface than on the first surface. The exposure of the first and second surfaces is conducted for a time sufficient for the growth phase to occur on the first surface, but not long enough for the growth phase to occur on the second surface.

REFERENCES:
patent: 5037775 (1991-08-01), Reisman
patent: 5084419 (1992-01-01), Sakao
patent: 5399511 (1995-03-01), Taka et al.
patent: 5459097 (1995-10-01), Abernathy et al.
patent: 5622559 (1997-04-01), Goto et al.
patent: 5981359 (1999-11-01), Onishi
patent: 6159852 (2000-12-01), Nuttall et al.
patent: 6342421 (2002-01-01), Mitani et al.
patent: 6627260 (2003-09-01), Derderian et al.
patent: 6645835 (2003-11-01), Yamoto et al.
patent: 6900115 (2005-05-01), Todd
patent: 6987055 (2006-01-01), Blomiley et al.
patent: 7115521 (2006-10-01), Brabant et al.
patent: 2002/0022347 (2002-02-01), Park et al.
patent: 2002/0127841 (2002-09-01), Horita et al.
patent: 2003/0045075 (2003-03-01), Joo et al.
patent: 2003/0176047 (2003-09-01), Doan et al.
patent: 2003/0186515 (2003-10-01), Dean et al.
patent: 2004/0171238 (2004-09-01), Arena et al.
patent: 2004/0183131 (2004-09-01), Nagano et al.
patent: 2004/0224089 (2004-11-01), Singh et al.
patent: 2005/0064640 (2005-03-01), Park et al.
patent: 2005/0066892 (2005-03-01), Dip et al.
patent: 01270593 (1989-10-01), None
patent: PCT/US2005/000566 (2005-01-01), None
Ratsch et al., “Nucleation theory and the early stages of thin film growth,” © 2003 American Vacuum Society, pp. S96-S109.
Oda, K. et al., “Si1−xGexSelective Epitaxial Growth for Ultra-High-Speed Self-Aligned HBT's”, Thin Solid Films 369 (2000), pp. 358-361.
Nishizawa, J. et al., “Molecular Layer Epitaxy of Silicon”, Journal of Crystal Growth 99 (Jan. 1990), pp. 502-505.
Kim, H. et al., “Low Temperature Selective Si Epitaxy by Reduced Pressure Chemical Vapor Deposition Introducing Periodic Deposition and Etching Cycles with SiH4, H2and HCI”, Mat.Res.Soc. Symp.Proc.vol. 609 (Apr. 2000), pp. A8.2.1-A8.2.6.
Utsumi, Y. “Synchrotron Radiation-Excited Si Photoepitaxy Using Gas-Source MBE”, Optoelectronics—Devices and Technologies vol. 11, No. 1 (Mar. 1996), pp. 23-42.
Murota, J. et al., “Low-Temperature Silicon Selective Deposition and Epitaxy on Silicon Using the Thermal Decomposition of Silane Under Ultraclean Environment”, Appl.Phys.Lett. 54 (Mar. 13, 1989), pp. 1007-1009.

Affiliated with

Also associated with

Rating

Deposition methods does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deposition methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposition methods will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3849856