Deposition method, method of manufacturing semiconductor...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S676000, C438S771000, C438S772000, C438S765000, C438S794000, C257S760000, C257S762000, C257SE21274, C257SE21492

Reexamination Certificate

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10867178

ABSTRACT:
The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon source selecting from the group consisting of silicon containing organic compound having siloxane bond and silicon containing organic compound having CH3group, and an oxidizing agent consisting of oxygen containing organic compound having alkoxyl group (OR: O is oxygen and R is CH3or C2H5), and applying electric power to the first deposition gas to generate plasma and then causing reaction to form a low dielectric constant insulating film on a substrate.

REFERENCES:
patent: 2002/0113316 (2002-08-01), Shioya et al.
patent: 2002/0187262 (2002-12-01), Rocha-Alvarez et al.
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patent: 2000-58641 (2000-02-01), None
patent: 2002-252228 (2001-06-01), None
patent: 03/052162 (2002-12-01), None
patent: 03/095702 (2003-08-01), None

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