Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2005-01-25
2005-01-25
Hassanzadeh, Parviz (Department: 1763)
Coating apparatus
Gas or vapor deposition
With treating means
C118S7230AN, C156S345410
Reexamination Certificate
active
06845734
ABSTRACT:
The invention includes a deposition apparatus having a reaction chamber, and a microwave source external to the chamber. The microwave source is configured to direct microwave radiation toward the chamber. The chamber includes a window through which microwave radiation from the microwave source can pass into the chamber. The invention also includes deposition methods (such as CVD or ALD methods) in which microwave radiation is utilized to activate at least one component within a reaction chamber during deposition of a material over a substrate within the reaction chamber.
REFERENCES:
patent: 5134965 (1992-08-01), Tokuda et al.
patent: 5545258 (1996-08-01), Katayama et al.
patent: 5645644 (1997-07-01), Mabuchi et al.
patent: 5698036 (1997-12-01), Ishii et al.
patent: 5749966 (1998-05-01), Shates
patent: 5788778 (1998-08-01), Shang et al.
patent: 5951887 (1999-09-01), Mabuchi et al.
patent: 5988104 (1999-11-01), Nambu
patent: 6040021 (2000-03-01), Miyamoto
patent: 6158383 (2000-12-01), Watanabe et al.
patent: 6311638 (2001-11-01), Ishii et al.
patent: 6347602 (2002-02-01), Goto et al.
patent: 6446573 (2002-09-01), Hirayama et al.
patent: 6527908 (2003-03-01), Kanetsuki et al.
patent: 0 520 832 (1992-12-01), None
patent: 1 115 147 (2001-07-01), None
patent: 0309913 (2003-03-01), None
Campbell Philip H.
Carpenter Craig M.
Dando Ross S.
Hassanzadeh Parviz
Micro)n Technology, Inc.
Wells St. John P.S.
LandOfFree
Deposition apparatuses configured for utilizing phased... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Deposition apparatuses configured for utilizing phased..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposition apparatuses configured for utilizing phased... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3392267