Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-31
2006-10-31
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21584
Reexamination Certificate
active
07129161
ABSTRACT:
This invention relates to a method of depositing a tantalum film in which α-Ta dominates and to methods of electroplating copper using such films. The films have a thickness of less than 300 nm and are formed by depositing a seed layer of an organic containing low dielectric constant insulating layer and sputtering tantalum onto the seed layer at a temperature below 250° C.
REFERENCES:
patent: 3878079 (1975-04-01), Schauer
patent: 4305998 (1981-12-01), Manty et al.
patent: 5221449 (1993-06-01), Colgan et al.
patent: 5281485 (1994-01-01), Colgan et al.
patent: 5882498 (1999-03-01), Dubin et al.
patent: 6146517 (2000-11-01), Hoinkis
patent: 6194307 (2001-02-01), Chen et al.
patent: 6221758 (2001-04-01), Liu et al.
patent: 6277728 (2001-08-01), Ahn et al.
patent: 6342448 (2002-01-01), Lin et al.
patent: 2001/0006224 (2001-07-01), Tsuchiya et al.
patent: 2002/0046874 (2002-04-01), Cabral et al.
patent: 0 388 888 (1990-09-01), None
patent: 0881 673 (1998-12-01), None
patent: 1 033 745 (2000-06-01), None
patent: 1 123 988 (2001-08-01), None
patent: WO 99/63593 (1999-12-01), None
patent: WO 00/17414 (2000-03-01), None
patent: WO 01/01472 (2001-01-01), None
patent: WO 01/17026 (2001-03-01), None
Kim et al., Chemical Interaction and Adhesion Characteristics at the interface of metals (Cu, Ta) and low—K Cyclohexane—Based Plasma Polymer (ChexPP) Films, J. Vac. Sci. Technol. A 19 (4), p. 1072-1077 (2001).
Hilke Donohue et al., “Low-resistivity PVD Tantalum: Phase formation and Integration in ultra-low k dielectric/ Copper damascene structures”.
Momtchil Stavrev et al., “Behavior of thin Ta-based films in the Cu/barrier/SI system,” J.ac. Sci. Technol. A 17(e), May/Jun. 1999, pp. 993-1001.
Sarkar Asok Kumar
Trikon Holdings Limited
Volentine Francos & Whitt PLLC
LandOfFree
Depositing a tantalum film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Depositing a tantalum film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Depositing a tantalum film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3683625